纳米Si-SiOx和Si-SiNx复合薄膜的低温制备及其发光特性

用等离子体增强化学气相沉积法在低温（低于50℃）衬底上沉积Si-SiOx和Si-SiNx复合薄膜,可得到平均颗粒尺寸小至3nm的高密度（最高可达4.0×1012cm-2）纳米硅复合薄膜.500℃快速退火后,这种复 合薄膜显现出优异的可见光全波段光致发光特性.通过比较相同条件下所制备的纳米Si-SiOx和Si-SiNx复合薄膜的光致发光效率,发现纳米Si-SiNx具有更为优异 的光致发光效率,这一点在可见光短波区表现得尤为显著.关键词：等离子体增强化学气相沉积冷衬底硅纳米颗粒光致发光

Low temperature fabrication of nanostructured Si-SiOx and Si-SiNx composite films and their photoluminescence features

Silicon nanoparticles were fabricated in both silicon oxide and nitride matrices by using plasma enhanced chemical vapor deposition, for which a low substrate t emperature belowo 50℃ has been found most favorable. High-density (up to 4.0 ×1012cm-2, from TEM micrograph) amorphous silicon nanoparticles with an averaged size down to 3　nm have been obtained. Strong room temperature photoluminescence was observed in the whole visible light range from the deposits that were post annealed at 500 ℃ for two minutes. Careful comparison shows that the Si-SiNx　films provoke a significantly more effective photoluminescence than Si-SiOx films f abricated with similar processing parameters, especially in the green and blue light range. Theis low- temperature procedure for fabricationg light-emitting silicon structures opens up the possibility of manufacturing silicon-based tunable high-efficiency light-e mitting devices.