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脉冲偏磁场作用下硬磁泡形成与温度的关系
引用本文:韩宝善,徐家法,聂向富,孙慧玲,欧阳芳丽,唐贵德.脉冲偏磁场作用下硬磁泡形成与温度的关系[J].物理学报,1988,37(9):1527-1533.
作者姓名:韩宝善  徐家法  聂向富  孙慧玲  欧阳芳丽  唐贵德
作者单位:(1)河北师范大学物理系; (2)吉林大学物理系,1985年毕业生; (3)中国科学院物理研究所
摘    要:用一次脉冲偏场法研究了外延石榴石磁泡薄膜条状畴畴壁中VBL群体形成与温度的关系。发现了与材料参量有关的临界温度T02,当T>T02时,硬磁泡不再形成。还发现了当T02时,VBL群体形成有两个明显不同的阶段,它们的分界温度为T01。定性解释了第一个阶段的实验曲线并用双重曝光照相法揭示了两个阶段中导致软畴段硬化的运动形式的差别。 关键词

收稿时间:1987-10-12

TEMPERATURE DEPENDENCE OF HARD BUBBLE FORMATION IN PULSE BIAS FIELDS
HAN BAO-SHAN,XIU JIA-FA,NIE XIANG-FU,SUN HUI-LING,OUYANG FANG-LI and TANG GUI-DE.TEMPERATURE DEPENDENCE OF HARD BUBBLE FORMATION IN PULSE BIAS FIELDS[J].Acta Physica Sinica,1988,37(9):1527-1533.
Authors:HAN BAO-SHAN  XIU JIA-FA  NIE XIANG-FU  SUN HUI-LING  OUYANG FANG-LI and TANG GUI-DE
Abstract:The temperature dependence of VBL group formation in stripe domain walls of epitaxial garnet bubble films was investigated by means of the method of single-pulse bias field. A critical temperature T02 was found, which relats to the parameters of bubble films. When T >T02, hard bubbles no longer form. It was also found that, when T02, there are two different stages for VBL group formation. Their demarcation temperature is T01. The experimental curves in the first stage have been qualitatively interpreted. And the difference of soft domain segment movements, which lead ro their hardening, in the two stages has been revealed by means of the method of double exposure photography.
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