| Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices |
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| 作者姓名： | 戴振宏 倪军 |
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| 作者单位： | [1]Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, Beijing 100084 [2]Department of Physics, Yantai University, Yantai 264005 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 10404022, and the National Basic Research Programme of China under Grant No G2000067107. |
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| 摘 要： | We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.
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| 关 键 词： | 偏步效应 双栅栏 共鸣隧道效应装置 非平衡电子转移 |
| 收稿时间： | 2005-11-08 |
| 修稿时间： | 2005-11-08 |
Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices |
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| DAI Zhen-Hong, NI Jun.Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices[J].Chinese Physics Letters,2006,23(4):960-963. |
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| Authors: | DAI Zhen-Hong NI Jun |
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