Charge states of substitutional S in Si |
| |
Authors: | J. Van Der Rest P. Pecheur |
| |
Affiliation: | Institut de Physique B5, Université de Liège, 4000 Sart Tilman, Belgium;Laboratoire de Physique du Solide, ENSMIM, Parc de Saurupt, 54042 Nancy, France |
| |
Abstract: | We study the electronic structure of the various charge states of a substitutional S impurity in Si in the tight-binding approximation. We take into account the changes in the diagonal elements of the host Hamiltonian on the impurity site and on its nearest neighbors and the changes in the off-diagonal elements between the impurity site and its nearest neighbors. Good agreement is found with experimental results and with more a priori calculations. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|