Search for radiation damage in heavy ion implanted thin layer single crystal SnS22

Single crystal platelets of stannic sulfide (SnS₂, trigonal) mounted with the easy cleavage plane normal to the incident ion beam, were implanted at 100 K with 150 and 350 KeV O⁺ ions to a total dose of $\text{\$}\text{?}$2.5 × 10¹⁷ cm^?2, and subsequently examined by ¹¹⁹Sn Mossbauer spectroscopy in transmission geometry. Despite the expectation that a hot zone of $\text{\$}\text{?}$300 Å radius is created near the end of the ion track, no evidence for the thermal decomposition of SnS₂ to SnS + S is observed for thermally well clamped samples. Data for the lattice temperature of oxygen implanted SnS₂ are compared to that for unirradiated single crystal and randomly oriented powder samples.