| 聚焦离子束工作原理及刻蚀性能研究 |
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| 引用本文： | 颜秀文,贾京英.聚焦离子束工作原理及刻蚀性能研究[J].电子工业专用设备,2010,39(9):14-16,32. |
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| 作者姓名： | 颜秀文 贾京英 |
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| 作者单位： | 中国电子科技集团公司第四十八研究所,湖南长沙,410111 |
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| 摘 要： | 综述了聚焦离子束系统的结构和基本原理,介绍了国产化聚焦离子束系统的结构与特点。基于国产化聚焦离子束系统进行了硅材料刻蚀实验,研究了硅材料刻蚀速率与离子束流大小的关系,建立了刻蚀速率与束流大小的关系方程,进行了硅悬梁微结构刻蚀加工。结果表明,国产聚焦离子束系统可满足硅微悬梁结构加工的应用需要。
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| 关 键 词： | 聚焦离子束 刻蚀速率 离子柱 微悬梁 |
The Study of Principles and Etch Properties of Focus Ion Beam System |
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| YAN Xiuwen,JIA Jingying.The Study of Principles and Etch Properties of Focus Ion Beam System[J].Equipment for Electronic Products Marufacturing,2010,39(9):14-16,32. |
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| Authors: | YAN Xiuwen JIA Jingying |
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| Institution: | YAN Xiuwen,JIA Jingying(The 48th Research Institute,CETC,Changsha 410111,China) |
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| Abstract: | The equipment structure and principle of focus ion beam(FIB) system were reviewed.The equipment character and structure of domestically produced FIB system were introduced and silicon wafers were etched base on this equipment.The relationship between etching ratio and ion beam current were investigated in the silicon wafer etching experiment,the relationship equation was derived,and the silicon micro cantilever has been etched.The results show that domestically produced FIB system can satisfy the need of si... |
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| Keywords: | Focused Ion Beam System Etch Ratio Ion Column Micro cantilever |
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