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Optical-gap reduction in the ordered phases of GaInAs solid solution |
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| Institution: | a Institute of Physics, Polish Academy of Sciences, 02-668, Warsaw, Poland b Institute of Applied Physics, EPFL, 1015, Lausanne, Switzerland c Dipartimento di Fisica Teorica and GNSM-CISM, Universita di Trieste, Italy |
| Abstract: | The measured optical band gap of the (GaAs)1(InAs)1 (001) superlattice is smaller than that of the corresponding Ga0.5In0.5As random alloy. Ab-initio pseudopotential calculations show that the effect is caused by a repulsion between the lowest conduction bands, or, equivalently, by the onset of confinement of electrons to GaAs layers, and is accompanied by the decrease of the electron effective mass. Similar reductions are obtained for the indirect band gaps, and for cubic phases of GaInAs solid solution. |
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