On the role of hydrogen in a-Si |
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| Authors: | J. Zemek M. Závětová S. Koc |
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| Affiliation: | Physical Institute, Czechoslovak Academy of Sciences, Prague, Czechoslovakia |
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| Abstract: | Samples of a-Si sputtered in a hydrogen enriched argon atmosphere were prepared under various hydrogen partial pressures and deposition temperatures and successfully doped with lithium. A decrease of the electrical conductivity and a shift of the absorption edge to the higher energy were observed and ascribed to the diminishing number of the localized states in the band gap due to the presence of hydrogen. |
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