Electrical transport in n-type semiconducting Ge120BixSe70?xTe10 glasses |
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Authors: | Noboru Tohge Tsutomu Minami Masami Tanaka |
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Institution: | Department of Applied Chemistry, College of Engineering, University of Osaka Prefecture, Sakai, Osaka 591, Japan |
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Abstract: | Resistivity and thermoelectric power were measured as a function of temperature and composition for Ge20BixSe70?xTe10 glasses (x = 0–11). The results were compared with the case of of Ge20BixSe80?x glasses to see on the electrical properties the influence of the substitution of Te for a part of Se. The glasses show n-type conduction for x ? 9, which was not affected by the substitution of Te. The resistivity was about three orders of magnitude lower for the glasses with x < 10, and remained almost the same for x ? 10, compared with the glasses not containing Te. From the composition dependence of the calculated concentration of covalent bonds in the glasses, it was proposed that the appearance of n-type conduction was closely related to the formation of a sufficient number of BiSe bonds and the disappearance of the bonds between two chalcogen atoms such as TeSe or SeSe bonds, and that the remarkably low resistivity in the present glasses with x < 10 was likely to be attributed to the formation of TeSe bonds. |
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