Investigation of the mechanisms of exciton coherence relaxation in single GaAs/AlGaAs quantum wells by the methods of excitonic induction |
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Authors: | S V Poltavtsev V V Ovsyankin B V Stroganov Yu K Dolgikh S A Eliseev Yu P Efimov V V Petrov |
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Institution: | (1) Physical Faculty, St. Petersburg State University, Peterhof, 198504, Russia |
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Abstract: | The mechanisms of exciton coherence relaxation in GaAs quantum wells in the linear mode have been experimentally investigated. An experimental technique has been developed for measuring the total phase relaxation rate, rates of reversible and temperature-irreversible excitonic phase relaxation, and the radiative decay rate Γ R of excitonic polarization. The experimental values of Γ R for a quantum well of specified thickness, obtained for a series of samples, have a spread not larger than 15%. This accuracy made it possible to estimate the shape of the dependence of Γ R on the well thickness L Z . It is experimentally found that Γ R is temperature-independent up to 80 K. |
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