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Gas sensor based on nanosize In2O3:Ga2O3 film
Authors:M. S. Aleksanyan   V. M. Arakelyan   V. M. Aroutiounian   A. Z. Adamyan  G. E. Shahnazaryan
Affiliation:1.Yerevan State University,Yerevan,Armenia
Abstract:Nanosize films of In2O3:Ga2O3 (96:4 weight %) have been deposited on a glassceramic substrate by the method of rf magnetron sputtering. The surfaces of fabricated films were studied with use of a scanning electron microscope; sizes of grains were determined and the thicknesses of films were measured. In order to prepare a gas-sensitive structure, a thin catalytic palladium layer and ohmic comb contacts were deposited on the In2O3:Ga2O3 film surface by the method of ion-plasma sputtering. The sensitivity of sensors based on the glassceramic/In2O3:Ga2O3 (96:4 weight %)/Pd structure to different concentrations of propane and butane gas mixture, as well as to methane was investigated at temperatures of working substance from 250 to 300°C.
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