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Formation of strontium atomic chains on the singular and stepped Si(111) surfaces |
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| Authors: | R A Zhachuk S A Teys and B Z Olshanetsky |
| Institution: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia ;2.Center for Research in Ceramics and Composite Materials (CICECO), University of Aveiro, Campus Santiago, Aveiro, 3810-193, Portugal ; |
| Abstract: | The surface structures 3 × 2, 5 × 2, 7 × 2, and 9 × 2 formed on the Si(111) plane during adsorption of submonolayer strontium have been investigated using scanning tunneling microscopy. The experimental data obtained are in agreement with the models of surface reconstructions proposed earlier for the structures induced by the adsorption of divalent metal atoms. An important constituent of these structures is provided by strontium atomic chains in the 〈1$ \bar 1 $ \bar 1 0〉 direction. Three types of domains of surface structures are formed on the Si(111) plane, which correspond to the rotational symmetry C 3 of the surface under consideration. The reduction of the symmetry of the substrate to C 1 with the use of the stepped Si(7 7 10) surface makes it possible to form strontium atomic chains, which are oriented with respect to the substrate in a similar manner. |
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