Synthesis of epitaxial Si(100) nanowires on Si(100) substrate using vapor–liquid–solid growth in anodic aluminum oxide nanopore arrays |
| |
| Authors: | T Shimizu S Senz S Shingubara U Gösele |
| |
| Institution: | (1) Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany;(2) Faculty of Engineering and HRC, Kansai University, Yamate-cho 3-3-35, Suita, Osaka 564-8680, Japan |
| |
| Abstract: | The synthesis of epitaxial Si nanowires with growth direction parallel to Si 100] on Si(100) substrate was demonstrated using
a combination of anodic aluminum oxide (AAO) template, catalytic gold film sandwiched between the template and the Si(100)
substrate and vapor-liquid-solid growth using SiH4 as the Si source. After growing out from the AAO nanopores, most Si nanowires changed their diameter and growth direction
into larger diameter and 〈111〉 direction.
PACS 81.07.-b; 82.45.Cc |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
