Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum |
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Authors: | L. K. Orlov E. A. Shteinman N. L. Ivina V. I. Vdovin |
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Affiliation: | 1.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhni Novgorod,Russia;2.Institute of Solid State Physics,Russian Academy of Sciences,Chernogolovka, Moscow oblast,Russia;3.Volgo-Vyatka Public Service Academy,Nizhni Novgorod,Russia;4.Interdisciplinary Resource Center “Nanotechnology,”,St. Petersburg State University,Petrodvorets, St. Petersburg,Russia |
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Abstract: | The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ∼ 900–700°C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (λexcit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (∼3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. The correlation between these components and the specific features of the crystal structure of the grown silicon carbide layers has been analyzed. |
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