Ab initio calculation of the band structure of some boron polymers |
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Authors: | David R. Armstrong |
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Affiliation: | (1) Department of Pure and Applied Chemistry, University of Strathclyde, G1 1XL Glasgow, Scotland, UK |
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Abstract: | Ab initio calculations using a STO-3G basis set have been performed on the polymer systems (HBX)n where X = Be, BH, CH2, NH, and O. Energy band diagrams and accompanying density-of-states plots have been obtained. The highest filled orbital of (HBNH)n and (HBO)n occurs at the X-point and possesses character while the - framework orbital at the X- point is the highest filled level for (HBBe)n, (HBBH)n, and (HBCH2)n. The conduction band for all five species has symmetry and the band gap of the (HBX)n species increases in the order X = Be < BH < NH < O < CH2. An estimate of the energy of polymerisation of the (HBX)n systems suggests that HBNH is particularly stabilised by polymerisation. The electron distribution in (HBBe)n shows a - electron drift towards boron, while in the other four systems the net electron transfer is directed away from boron. There is significant electron back-donation to boron in (HBO)n and (HBNH)n. |
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Keywords: | Boron Polymers Ab initio calculations Band structure calculations |
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