A fast method to diagnose phase transition from amorphous to microcrystalline silicon |
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| Authors: | Hou GuoFu Xue JunMing Yuan YuJie Sun Jian Zhao Ying Geng XinHua |
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| Institution: | Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Tianjin 300071, China;Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education of China, Tianjin 300071, China |
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| Abstract: | A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition
method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics
of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same
time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about
the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial
analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition
from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose
the phase transition, was analyzed theoretically.
Supported by the National Basic Research Program of China (Grant Nos. 2006CB202602 and 2006CB202603) |
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| Keywords: | amorphous silicon microcrystalline silicon phase transition optical emission spectroscopy |
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