Recombination of nonequilibrium charge carriers in epitaxial Hg1−x Cdx Te MBE films

We present the results of charge-carrier lifetime measurements in narrow-band Hg_1−xCd_xTe epitaxial structures (x=0.210–0.225) grown by molecular-beam epitaxy (MBE) using pulsed excitation by radiation at various wavelengths. In p-type epitaxial films the carrier lifetime is governed by Shockley-Read recombination at impurity-conduction temperatures. The governing factor for n-type epitaxial films is Auger recombination, with some contribution from other recombination mechanisms (surface and macrodefects). V. D. Kuznetskov Siberian Physicochenical Institute, Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 96–101, September, 1997.