| Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications |
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| 引用本文： | 李微,赵彦民,刘兴江,敖建平,孙云. Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications[J]. 中国物理 B, 2011, 20(6): 68102-068102 |
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| 作者姓名： | 李微 赵彦民 刘兴江 敖建平 孙云 |
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| 作者单位： | [1]National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China [2]School of Material Science and Engineering, Tianjin University, Tianjin 300071, China [3]Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
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| 摘 要： | Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.
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| 关 键 词： | Mo film Cu(InGa)Se2 back contact |
| 收稿时间： | 2010-10-26 |
Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications |
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| Li Wei,Zhao Yan-Min,Liu Xing-Jiang,Ao Jian-Ping and Sun Yun. Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications[J]. Chinese Physics B, 2011, 20(6): 68102-068102 |
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| Authors: | Li Wei Zhao Yan-Min Liu Xing-Jiang Ao Jian-Ping Sun Yun |
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| Affiliation: | National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China; School of Material Science and Engineering, Tianjin University, Tianjin 300071, China;National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China;National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China;Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
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| Abstract: | Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%. |
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| Keywords: | Mo film Cu(InGa)Se2 back contact |
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