Photoluminescence of CuGaS2 and heterostructure formation with sputtered ZnS |
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| Authors: | S Iida Y Oguro H Honda S Suzuki |
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| Institution: | (1) Technological University of Nagaoka, Kamitomioka, 949-54 Nagaoka, Japan;(2) Present address: Horikawacho Works, Toshiba Corporation, Horikawacho, 210 Kawasaki, Japan;(3) Present address: Atsugi Plant, Sony Corporation, Asahicho, 243 Atsugi, Japan;(4) Present address: Technical High School attached to the Faculty of Engineering of Tokyo Institute of Technology, Shibaura, Minatoku 108, Tokyo, Japan |
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| Abstract: | Summary CuGaS2 crystals grown by iodine transport exhibit room temperature photoluminescences at 2.45 eV and at 1.44 eV. The spectral distribution
of the green emission is shown to be relatively well described by the calculated curve for a direct band-to-band transition
withk-selection. The heterojunction formation has been tried between sulfur-treated CuGaS2 crystals and low-resistivity amorphous ZnS films prepared by sputtering at room temperature. TheI–V characteristic of the diode shows rectifying behaviour, but no injection luminescence has been observed.
Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16,
1982. |
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| Keywords: | Photoluminescence |
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