Effect of oxygen annealing on the photoresponse of PbSe thin films fabricated by the pulsed laser deposition method |
| |
| Authors: | Ramu Pasupathi Sugavaneshwar Thang Duy Dao Takahiro Yokoyama Satoshi Ishii |
| |
| Affiliation: | 1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Ibaraki, Japan;2. CREST, Japan Science and Technology Agency, Saitama, Japan |
| |
| Abstract: | In this work, we have fabricated lead selenide (PbSe) thin films by the pulsed laser deposition method on Si/SiO2 substrates and investigated the effect of oxygen annealing (sensitization) in these films. The oxygen-sensitized films show high responsivity in the visible (VIS) and the near-infrared (NIR) region at room temperature without cooling. We also demonstrate the effective surface oxidation of PbSe thin films during the oxygen annealing process without treated with commonly used halogens that leads to a better photoresponse in these PbSe films. |
| |
| Keywords: | PbSe surface oxidation photoresponse infrared detector pulsed laser deposition |
|
