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Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties |
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| Authors: | Kin Kiong Lee Danna Wang Onoda Shinobu Takeshi Ohshima |
| Institution: | 1. SemiRad Corporation, Victoria, Australia;2. National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma, Japan |
| Abstract: | |
| Keywords: | ZnO thin film transistor interface traps channel mobility degradation total dose grain boundary traps gamma irradiation |