New concepts for controlled homoepitaxy |
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Authors: | G. Rosenfeld N. N. Lipkin W. Wulfhekel J. Kliewer K. Morgenstern B. Poelsema G. Comsa |
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Affiliation: | (1) Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany;(2) Faculty of Applied Physics and Centre for Materials Research (CMO), University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands |
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Abstract: | On the basis of a kinetic growth model we discuss new methods to grow atomically flat homoepitaxial layers in a controlled way. The underlying principle of these methods is to change the growth parameters during growth of an atomic layer in such a way that nucleation on top of a growing layer is suppressed, and thus, layer-by-layer growth is achieved. Experimentally, this can be realized by changing the substrate temperature or deposition rate during monolayer growth in a well-defined way. The same can be achieved at constant temperature and deposition rate by simultaneous ion bombardment during the early stages of growth of a monolayer, or by adding suitable surfactants to the system. Model experiments on Ag(111) and on Cu(111) using thermal energy atom scattering and scanning tunneling microscopy demonstrate the success of these methods. |
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Keywords: | 68.55.— a 61.50.Cj 81.15.— z |
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