无氧溅射方法制备OLED的ITO透明电极

采用氧化铟锡(ITO)合金材料作为靶材,通过射频磁控溅射制备ITO膜.将获得的ITO膜应用于结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(100 nm)的有机电致发光器件(OLED),得到了最大亮度为11560 cd/m2(电压为25V)、最大效率为2.52 cd/A(电压为14 V)的结果.为了获得双面发光,制作了结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(20 nm)/ITO(50 nm)的器件,其阳极出光的最大亮度为14460 cd/m2(电压为18V)、最大效率为2.16 cd/A(电压为12V),阴极出光的最大亮度为1 263 cd/m2(电压为19 V)、最大效率为0.26 cd/A(电压为16V).

Fabrication of OLED ITO Transparent Electrode with Oxygen-free Sputtering Method

A method to generate double-side light-output organic light emitting devices(OLEDs) using oxygen-free sputtering target by R.F.magnetron reactive sputtering system has been presented.It is demonstrated that the method leads to a promising result in the fabrication of OLED.When the OLED structure is ITO (using oxygen-free sputtering target)/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(100 nm),the maximum brightness and efficiency achieve 11 560 cd/m2(V=25 V),and 2.52 cd/A(V=14 V),respectively.In the double-side light-output OLED,whose structure is ITO (commercial production)/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(20 nm)/ITO(50 nm) (using oxygen-free sputtering target).The maximum brightness and efficiency measued from anode side attain 14 460 cd/m2(V=18 V) and 2.16 cd/A(V=12 V),respectively,and these measured from cathode side are 1 263 cd/m2(V=19 V),0.26 cd/A(V=16 V).