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Improved Surface Characteristics and Contact Performance of Epitaxial p-AlGaN by a Chemical Treatment Process
作者姓名:邵嘉平  韩彦军  汪莱  江洋  席光义  李洪涛  赵维  罗毅
作者单位:State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
基金项目:Supported by the National Key Basic Research Special Foundation of China under Grant No T(32000036601, the National High Technology Program of China under Grant Nos 2001AA313130 and 2004AA31G060, the National Natural Science Foundation of China under Crant Nos 60244001 and 60390074, and the Beijing Science and Teclnology Plan (D04040040321).
摘    要:The comparative study of epitaxial 380-run-thick p-Al0.091 Ga0.909 N materials without and with special surface chemical treatment is systematically carried out. After the treatment process, the deep level luminous peak in the 10 K photoluminescence spectrum is eliminated due to the decrease of surface nitrogen vacancy VN related defective sites, while the surface root-mean-square roughness in atomic force microscopy measurement is decreased from 0.395nm to 0.229nm by such a surface preparation method. Furthermore, the performance of surface contact with Ni/Au bilayer metal fihns is obviously improved with the reduction of the Schottky barrier height of 55meV. The x-ray photoelectron spectroscopy (XPS) results show a notable surface element content change after the treatment which is considered to be the cause of the above-mentioned surface characteristics improvement.

关 键 词:改良表面性状  接触性能  p-AlGaN外延性  处理过程  表面物理学
收稿时间:2005-10-19
修稿时间:2005-10-19

Improved Surface Characteristics and Contact Performance of Epitaxial p-AlGaN by a Chemical Treatment Process
SHAO Jia-Ping, HAN Yan-Jun, WANG Lai, JIANG Yang, XI Guang-Yi, LI Hong-Tao, ZHAO Wei, LUO Yi.Improved Surface Characteristics and Contact Performance of Epitaxial p-AlGaN by a Chemical Treatment Process[J].Chinese Physics Letters,2006,23(2):432-435.
Authors:SHAO Jia-Ping  HAN Yan-Jun  WANG Lai  JIANG Yang  XI Guang-Yi  LI Hong-Tao  ZHAO Wei  LUO Yi
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