Dynamic pull-in phenomenon in MEMS resonators |
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Authors: | Ali H Nayfeh Mohammad I Younis Eihab M Abdel-Rahman |
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Institution: | (1) Department of Engineering Science and Mechanics, MC 0219, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, USA;(2) Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, NY 13902, USA;(3) Department of Systems Design Engineering, University of Waterloo, Waterloo, Ontario, Canada, N2L 3G1 |
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Abstract: | We study the pull-in instability in microelectromechanical (MEMS) resonators and find that characteristics of the pull-in
phenomenon in the presence of AC loads differ from those under purely DC loads. We analyze this phenomenon, dubbed dynamic pull-in, and formulate safety criteria for the design of MEMS resonant sensors and filters excited near one of their natural
frequencies. We also utilize this phenomenon to design a low-voltage MEMS RF switch actuated with a combined DC and AC loading.
The new switch uses a voltage much lower than the traditionally used DC voltage. Either the frequency or the amplitude of
the AC loading can be adjusted to reduce the driving voltage and switching time. The new actuation method has the potential
of solving the problem of high driving voltages of RF MEMS switches. |
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Keywords: | MEMS Microbeams Resonators Pull-in Primary resonance Electric actuation |
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