In2O3敏化ZnO纳米棒阵列的性能及其光电催化活性

以掺氟SnO₂ (FTO)导电玻璃为基底, 采用水热法制备了ZnO纳米棒阵列. 通过In(NO₃)₃水溶液水洗的方法, 合成了In₂O₃敏化ZnO纳米棒阵列光催化剂. 采用场发射扫描电子显微镜(FESEM), X射线能谱(EDX), X射线衍射(XRD)及紫外-可见漫反射光谱(UV-Vis DRS)对样品的形貌、结构、组成、晶相等进行一系列的表征. 以罗丹明B (RhB)为目标降解物, 探究了In₂O₃敏化ZnO 纳米棒阵列光电催化活性. 采用场诱导表面光伏技术(FISPV)研究了不同含量的In₂O₃敏化ZnO纳米棒阵列在光照射下的光生电荷行为. 结合电化学工作站检测不同样品的光电流, 随着In₂O₃敏化量的改变, 光电流和开路电压也随之改变. 并探讨了In₂O₃敏化ZnO纳米棒阵列光生电荷行为与光电催化活性之间的关系. 结果表明, 适量In₂O₃敏化的ZnO光催化剂在可见光下2 h内对罗丹明B的降解效率达到95%, 是单纯ZnO纳米棒阵列的2.4倍.

Properties and Photoelectrocatalytic Activity of In2O3-Sensitized ZnO Nanorod Array

In₂O₃-sensitized ZnO nanorod array films were prepared in a two-step aqueous process on fluorine-doped tin oxide (FTO) substrates. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), field-induced surface photovoltage (FISPV), and UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) were used to characterize films. The influence of In₂O₃ content on the transfer characteristics of photoinduced charge carriers is discussed based on photovoltage response. The photoelectrocatalytic degradation efficiency of In₂O₃-sensitized ZnO nanorod array films was monitored using UV-Vis spectrometer. The photoelectrocatalytic activity of ZnO nanorod array and In₂O₃-sensitized ZnO nanorod array were evaluated from the degradation efficiency of rhodamine B (RhB). The effect of the In₂O₃-sensitized ZnO heterostructure on photoinduced electrons was investigated using the electrochemical workstation and the relationship between the photoinduced electron behavior and the photoelectrocatalytic process. Aqueous RhB was more efficiently degraded by the In₂O₃-sensitized ZnO nanorod array (visible light, applied bias voltage, 2 h), and the efficiency of the In₂O₃-sensitized array (95%) was 1.4 times higher than that of pure ZnO.