Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs) |
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| Affiliation: | 1. Department of Mechanical Engineering, Stanford University, USA;2. Institute for Computational and Mathematical Engineering, Stanford University, USA;1. Key Laboratory of Digital Earth Science, Institute of Remote Sensing and Digital Earth, Chinese Academy of Science, Beijing 100094, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. College of Geoscience and Surveying Engineering, China University of Mining and Technology (Beijing), Beijing 100083, China;4. National Agro-technical Extension and Service Centre, Ministry of Agriculture, Beijing 100026, China;1. Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel;2. SCD-SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel;1. Fulcrum Company, Centreville, VA 20120, United States;2. U.S. Army RDECOM CERDEC NVESD, Ft. Belvoir, VA 22060, United States;3. U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States;4. U.S. Navy Research Laboratory, Washington, DC 20375, United States;1. Institut des Matériaux Jean Rouxel (IMN) – UMR6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France;2. Sorbonne Université, Faculté des Sciences et Ingénierie, UMR CNRS, Laboratoire de Chimie Physique – Matière et Rayonnement, boîte courrier 1140, 4 place Jussieu F-75252 Paris Cedex 05, France |
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| Abstract: | We report on new InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar and phototransistors (CEHBTs/CEHPTs) with a low turn-on voltage. The composite emitter comprised of the digital graded superlattice emitter and the InGaP sub-emitter is used to smooth out potential spike associated with the emitter–base heterojunction and to obtain a low emitter–base turn-on voltage. A fabricated CEHBT exhibits a small offset voltage of 55 mV and a low turn-on voltage of 0.83 V with a dc current gain as high as 150. In case of a CEHPT’s collector–emitter characteristics with base floating, optical gains increase with increasing input optical power. Furthermore, the collector current saturation voltage is small due to a low turn-on voltage. We obtain an optical gain larger than 6.83 with a collector current saturation voltage smaller than 0.5 V. On the other hand, performance results of a CEHPT with two- and three-terminal configuration were investigated and compared. |
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