Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well

Affiliation:	1. Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey;2. Department of Physics, Dokuzeylul University, Izmir, Turkey;3. Department of Electronic Systems Engineering, University of Essex, Colchester, Essex CO4 3SQ, UK;1. Department of Chemistry, Soongsil University, Seoul 156-743, Republic of Korea;2. Department of Physics, Sogang University, Seoul 121-742, Republic of Korea;3. School of Systems Biomedical Science, Soongsil University, Sangdo-dong, Dongjak-gu, Seoul, Republic of Korea;4. Department of Chemistry, Gachon University, Seongnam 461-701, Republic of Korea;5. Gachon Medical Research Institute, Gil Medical Center, Inchon 405-760, Republic of Korea;6. Department of Bionano Technology, Hanyang University, Ansan 426-791, Republic of Korea;7. College of Veterinary Medicine, Seoul National University, Seoul 156-743, Republic of Korea;8. Molecular-level Interface Research Center and Department of Chemistry, KAIST, Daejeon 305-701, Republic of Korea

Abstract:	We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga_1−xAl_xAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field strength but also decreases depending on the magnetic length. We have observed oscillatory behavior of the density of carriers due to the in-plane magnetic field.

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