An investigation of smooth nano-sized copper seed layers on TiN and TaSiN by new non-toxic electroless plating |
| |
| Institution: | 1. Department of Chemistry, National Taiwan University, Taipei, Taiwan, ROC;2. National Nano Device Laboratories, Hsinchu, Taiwan, ROC;3. Merck-Kanto Advanced Chemicals Ltd., Taoyuan, Taiwan, ROC;1. Inorganic Chemistry Department, University of Yaounde I, P.O. Box 812, Yaounde, Cameroon;2. Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain, Place Louis Pasteur 1, L4.01.09, 1348 Louvain-la-Neuve, Belgium;3. Laboratoire de Génie des Procédés Catalytiques (UMR5285 CNRS et CPE Lyon), 3, rue Victor Grignard, B.P. 82077, 69616 Villeurbanne cedex, France;1. Department of Physics, University of Minho, Campus Gualtar, P-4710-057 Braga, Portugal;2. Center of Physics of University of Minho and University of Porto, P-4169-007 Oporto, Portugal;3. Beijing Computational Science Research Center, Beijing 100193, China;4. Departamento de Fisica and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, P-1049-001 Lisboa, Portugal;1. Institute of Power Source & Ecomaterials Science, Hebei University of Technology, Tianjin 300130, China;2. Key Laboratory for Palygorskite Science and Applied Technology of Jiangsu Province, Huaiyin Institute of Technology, Huaian 223003, China;3. Key Laboratory of Special Functional Materials for Ecological Environment and Information, Hebei University of Technology, Ministry of Education, Tianjin 300130, China;4. Hebei United University Qian’an College, Hebei 064400, China |
| |
| Abstract: | The purpose of this research is to explore the properties of a copper seed layer grown by electroless plating on TiN. We have developed a displacement layer made of amorphous silicon (a-Si) and copper contact displacement process to improve the island structure of copper activated layer which can then be grown directly on the surface of TiN. Furthermore, this research proposes glyoxylic acid as replacements to formaldehyde, which is commonly used at present as a reductant but regarded as a carcinogen, and is of high volatility. The copper seed layer has been grown by electroless plating on an activated surface of TiN, at the set temperature of 60 °C with the plating bath consisting of the copper source, complexing agent, stabilizer and surfactant. The existence of a copper seed layer provides not only the conduction layer, but also the copper nucleation layer, to help the growth of electroplated copper on the surface of TiN. Moreover, based on the results of the studies can lead us to grow a smooth nano-sized Cu seed layer on the top of a TaSiN layer. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
