Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge |
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| Authors: | N.M. Liao W. Li Y.D. Jiang Y.J. Kuang K.C. Qi Z.M. Wu S.B. Li |
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| Affiliation: | (1) State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China;(2) School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China |
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| Abstract: | The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual ordering of the amorphous network, both in the near surface and interior region on increasing the silane-gas temperature. In addition, the increase in the gas temperature leads to an improved ordering of amorphous network on the short and intermediate scales towards the surface of a-Si:H thin films. Post-annealing at 250 °C for 3 h mainly leads to a short and intermediate range improvement in the interior region of the films. Our present results suggest that a-Si:H thin films with better quality could be deposited at higher silane-gas temperature. PACS 63.50.+x; 61.43.-j; 75.40.-s |
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