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On the use of the photoacoustic technique for the measurement of the thermomechanical properties of semiconductor two-layer systems |
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| Authors: | A. Cruz Orea I. Delgadillo H. Vargas J.L. Pichardo J.J. Alvarado-Gil L.C.M. Miranda |
| Affiliation: | a Programa Multidisciplinario de Ciencias Aplicadas y Tecnología Avanzada, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 17-740, D.F. 07000, México b Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Apdo. Postal 14-740, D.F. 07000, México c Instituto Nacional de Pesquisas Espaciais, 12227-010, São José dos Campos, SP, Brazil |
| Abstract: | The photoacoustic technique is used in semiconductor two-layer systems for the determination of thermal properties and thermal expansion coefficient. The two-layer systems studied were amorphous silicon-glass and Al0.2Ga0.8As---GaAs. Our results show that the proposed method is a reliable technique for the characterization of other semiconductor two-layers systems. |
| Keywords: | A. semiconductors D. heat conduction D. thermal expansion |
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