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Acceptor resonances and electrically active point defects in α-Sn
Authors:S. Myhra
Affiliation:School of Science, Griffith University, Nathan, Queensland, 4111, Australia
Abstract:New galvanomagnetic and thermoelectric results for electron-irradiated n-type α-Sn show that acceptor resonance states in the conduction band play a crucial role. It is found that these states are near the band edge and are associated with electrically active point defects resulting from atomic displacements.
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