Exciton capture cross sections of indium and boron impurities in silicon |
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| Authors: | R.M. Feenstra T.C. McGill |
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| Affiliation: | California Institute of Technology Pasadena, California 91125, USA |
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| Abstract: | Measurements have been made of the decay rates and intensity ratios of photoluminescence lines from Si:In, B. We deduce values for the In and B exciton capture cross sections in the temperature range 3.6 ? 5.9 K. The large difference between the In and B cross sections is discussed in terms of excited states of the In bound exciton. |
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