| 基于等离子体增强化学气相沉积技术的光电子器件多层抗反膜的设计和制作 |
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| 引用本文： | 袁贺,孙长征,徐建明,武庆,熊兵,罗毅.基于等离子体增强化学气相沉积技术的光电子器件多层抗反膜的设计和制作[J].物理学报,2010,59(10):7239-7244. |
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| 作者姓名： | 袁贺 孙长征 徐建明 武庆 熊兵 罗毅 |
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| 作者单位： | 清华大学电子工程系,清华信息科学与技术国家实验室,集成光电子学国家重点实验室,北京100084 |
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| 基金项目： | 国家自然科学基金(批准号:60536020, 60723002, 50706022, 60977022)和国家重点基础研究发展计划(批准号:2006CB302800, 2006CB921106)资助的课题. |
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| 摘 要： | 针对光电子器件端面抗反镀膜的要求,研究了基于等离子体增强化学气相沉积(PECVD)技术的多层抗反膜的设计和制作.首先,对影响SiNx折射率的因素进行了实验研究,确定了具有大折射率差的SiO2/SiNx材料的PECVD沉积条件.根据理论计算分析,设计了四层SiO2/SiNx抗反膜结构,能够在70 nm的波长范围内实现低于10-4的反射率
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| 关 键 词： | 抗反膜 等离子体增强化学气相沉积 二氧化硅/氮化硅多层膜 |
| 收稿时间： | 2009-08-26 |
| 修稿时间： | 2/3/2010 12:00:00 AM |
Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition |
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| Yuan He,Sun Chang-Zheng,Xu Jian-Ming,Wu Qing,Xiong Bing,Luo Yi.Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition[J].Acta Physica Sinica,2010,59(10):7239-7244. |
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| Authors: | Yuan He Sun Chang-Zheng Xu Jian-Ming Wu Qing Xiong Bing Luo Yi |
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| Institution: | State Key Laboratory of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;State Key Laboratory of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;State Key Laboratory of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;State Key Laboratory of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;State Key Laboratory of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;State Key Laboratory of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
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| Abstract: | The design and fabrication of multilayer antireflection (AR) coating based on plasma enhanced chemical vapor deposition (PECVD) is studied for its applications in optoelectronic devices. Deposition conditions for obtaining SiO2/SiNx thin films with large refractive index difference is determined through systematic study of factors influencing the refractive index of deposited SiNx. Four-layer SiO2/SiNx AR coating is designed to exhibit a reflectivity of less than 10-4 over 70 nm bandwidth. Reflectivity of the thin film structure at the center wavelength of 1550 nm remains less than 5×10-4 when the thickness deviation of any single layer is within ±5 nm from the designed value. Based on the simulation results, SiO2/SiNx multilayer AR coating is deposited on the end facet of a Fabry-Perot laser. By analyzing the output spectra of the laser, the residual reflectivity of the AR coating is determined to be on the order of 10-4 over the wavelength range of 1535—1565 nm. |
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| Keywords: | antireflection (AR) coating plasma enhanced chemical vapor deposition SiO2/SiN<>i>x |
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