Modeling of the impurity distribution obtained by ion implantation |
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| Authors: | V. G. Abdrashitov V. V. Ryzhov |
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| Affiliation: | (1) Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences, Russia |
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| Abstract: | Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.Translated from Izvstiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 5, pp. 8–22, May, 1994. |
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