Synthesis of Nanosized Silicon Carbide Through Non-Transferred Arc Thermal Plasma |
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Authors: | Prabhakar Rai Yun-Su Kim Sang-Ki Kang Yeon-Tae Yu |
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Institution: | (1) Division of Advanced Materials Engineering and Research Centre for Advanced Materials, Development, Chonbuk National University, Jeonju, 561-756, South Korea;(2) Neoplant Co. LTD, Chonbuk, 585-821, South Korea; |
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Abstract: | A thermal plasma system was used for the preparation of nanosized SiC powder. First SiC was synthesized by solid-state reaction
using waste silicon and activated carbon powders and then plasma processing was carried out to form nanosized SiC. Phase and
structural analysis was carried out by X-ray diffraction which confirmed the formation of SiC in both cases. Plasma treatment
did not show any kind of change in structure and phase of SiC; except little free silicon. Morphological investigation showed
the formation of 20–30 nm spherical SiC particles after plasma treatment which was initially 1–5 μm. It was found that DC
current played an important role in the reduction of particle size. It was proposed that nanosized SiC was formed due to the
dissociation of grains from their grain boundary due to strong plasma gas stream. |
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