| Improved Voltage and Fill Factor by Using Zinc Oxide Thin Film as a Barrier Layer in Dye-Sensitized Solar Cells |
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| 作者姓名： | 王鹏 王立铎 李斌 邱勇 |
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| 作者单位： | [1]Key Laboratory of Organic Optoelectronics ＆ Molecular Engineering of Ministry of Education Department of Chemistry, Tsinghua University, Beijing 100084 |
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| 基金项目： | Supported by the National Basic Research Program of China under Grant No 2002CB613405, and the National Natural Science： Foundation of China under Grant No 90101029. |
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| 摘 要： |
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| 关 键 词： | 薄膜 氧化锌 纳米材料 电压特性 |
| 收稿时间： | 2005-06-14 |
| 修稿时间： | 2005-06-14 |
Improved Voltage and Fill Factor by Using Zinc Oxide Thin Film as a Barrier Layer in Dye-Sensitized Solar Cells |
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| Wang Peng;Wang LiDuo;Li Bin;Qiu Yong.Improved Voltage and Fill Factor by Using Zinc Oxide Thin Film as a Barrier Layer in Dye-Sensitized Solar Cells[J].Chinese Physics Letters,2005,22(10):2708-2710. |
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| Authors: | Wang Peng;Wang LiDuo;Li Bin;Qiu Yong |
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| Abstract: | A series of dye-sensitized solar cells based on ZnO-modified TiO2 nano-porous films have been prepared. The current-voltage characteristics of the cells show that the ZnO-modification can improve the open-circuit voltage and the fill factor but can decrease the short-circuit current. Dark current and transient photovoltage measurements are used to study the back reaction. It is indicated that the recombination process is suppressed by blocking the hole transporting from the nano-porous TiO2 since the surface of the semiconductor is almost fully covered with ZnO as a barrier layer. |
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