Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1−xAsySb1−y epitaxial layers for photovoltaic applications |
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Authors: | ML Gomez-Herrera P Rodriguez-Fragoso JG Mendoza-Alvarez |
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Institution: | a CICATA-IPN, Unidad Legaria, Av. Legaria 694, Col. Irrigacion, México, D.F. 11500, Mexico b Departamento de Fisica, Cinvestav-IPN, Apartado Postal 14-740, México, D.F. 07000, Mexico c Facultad de Ingenieria Fisica, University Autonoma de Yucatan, Merida, Yuc, Mexico |
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Abstract: | In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases. |
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Keywords: | Semiconductor photoluminescence Liquid phase epitaxy growth Photovoltaic devices |
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