Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface |
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Authors: | U Seidel |
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Institution: | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Glienicker Strasse 100, 14109 Berlin, Germany |
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Abstract: | In this paper, the InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ−Δ−X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks. |
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Keywords: | 73 20 At 73 61 Ey 79 60 &minus i 79 60 Bm |
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