Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation |
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| Authors: | SA Vitusevich AM Kurakin AE Belyaev |
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| Institution: | a Institut für Bio- und Nanosysteme and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich, Jülich D-52425, Germany
b Institute of Semiconductor Physics, NASU, Pr. Nauki 41, 03028 Kiev, Ukraine |
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| Abstract: | The cathodoluminescence (CL) spectra of AlGaN/GaN heterostructures grown on sapphire substrate were studied before and after gamma irradiation treatment. The CL spectroscopy results reveal strong yellow and blue luminescence transformation under gamma radiation treatment. The changes in CL spectra are compared with changes in the electrical characteristics of two-dimensional gas in AlGaN/GaN heterostructures. The origins of the observed improvement in properties of AlGaN/GaN heterostructures after gamma radiation treatment with 1 × 106 rad are discussed on the basis of compensation and structural ordering of native defects. |
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| Keywords: | 73 40 Kp 73 43 Qt 73 61 Ey 74 25 Fy |
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