Gas-phase formation of SiSe in IR laser-co-decomposition of dimethyl selenide and 1,3-disilacyclobutane |
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| Authors: | Luis Díaz Josef Pola |
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| Institution: | a Instituto de Estructura de la Materia, C.S.I.C., 28024 Madrid, Spain
b Laboratory of Laser Chemistry, Institute of Chemical Process Fundamentals, A.S.C.R., 16502 Prague, Czech Republic |
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| Abstract: | A LIF excitation spectrum of SiSe obtained upon IR laser irradiation of gaseous mixture of 1,3-disilacyclobutane and dimethyl selenide reveals that the previously reported infrared multiple photon co-decomposition of both compounds involves formation of SiSe. The SiSe formation is explained in terms of reaction of Se atoms with RHSi: silylenes (R = CH3, H) and silene, and elimination of RH from silaneselones (RHSiSe, R = CH3, H). |
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| Keywords: | Silicon selenide formation Dimethyl selenide 1 3-Disilacyclobutane IR laser-induced co-decomposition Laser induced fluorescence |
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