Thickness dependence of temperature coefficient of resistance of MnBi films

In-situ measurements of the temperature coefficient of resistance of electron-beam evaporated MnBi films are reported for the thickness range 30–180 nm. The thickness dependence of the temperature coefficient of resistance curves are plotted for different weight ratios, annealing times and substrate temperatures. The temperature coefficient of resistance shows marked size effect, and is negative for lower thicknesses (<100nm) and positive for higher thicknesses. The experimental data is in good agreement with the Mayadas-Shatzkes theory. The thickness dependence of the Curie temperature also indicates marked size effect.