| 相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性 |
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| 引用本文： | 刘波,阮昊,干福熹.相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性[J].光子学报,2003,32(7):834-836. |
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| 作者姓名： | 刘波 阮昊 干福熹 |
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| 作者单位： | 中国科学院上海光学精密机械研究所,上海,201800 |
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| 基金项目： | SupportedbyShanghaiAppliedPhysicsResearchCenter(99JC14 0 0 9)，NationalScienceFoundationofChina(5 9832 0 6 0 ) |
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| 摘 要： | 采用射频磁控溅射法制备了ZnS-SiO2 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO2薄膜微结构和折射率n的影响.研究表明,ZnS-SiO2薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO2基体中,当溅射功率和溅射气压变化时,ZnS-SiO2薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO2介电薄膜.
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| 关 键 词： | ZnS-SiO2薄膜 微结构 折射率 |
| 收稿时间： | 2002-08-19 |
Microstructure and Optical Property of ZnS-SiO2 Dielectric Thin Films for Phase-change Optical Disks |
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| Abstract.Microstructure and Optical Property of ZnS-SiO2 Dielectric Thin Films for Phase-change Optical Disks[J].Acta Photonica Sinica,2003,32(7):834-836. |
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| Authors: | Abstract |
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| Institution: | Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P. O. Box 800-211, Shanghai 201800, P. R. China |
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| Abstract: | The ZnS-SiO2 dielectric thin films were deposited by using RF magnetron-sputtering. The effect of deposition conditions on the microstructure and refractive index n was studied by TEM and ellipsometry. The grain size of ZnS-SiO2 film is very small and ZnS is particulate with small sized particles, at around 2～10 nm, in a SiO2 matrix. Significant changes in microstructure occur due to variation of the sputtering power and pressure. The change of microstructure of ZnS-SiO2 film is mainly responsible for the dependence of the refractive index n on the sputtering pressure and power. By optimizing the sputtering process, high performance ZnS-SiO2 dielectric film for phase-change optical disks could be fabricated. |
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| Keywords: | ZnS-SiO2 thin film Microstructure Refractive index |
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