Instrumental neutron activation analysis of silicon wafers using the silicon matrix as the comparator

For the instrumental neutron activation analysis of trace impurities in high purity silicon wafer, a modified single comparator method has been applied. The energy distribution of the neutrons at the irradiation position was measured using the two flux monitors, Au and Co, and elemental contents were calculated using the silicon matrix in the wafer as a comparator. This has advantage of reducing the cross contamination from an external monitor during sample preparation and irradiation, the uncertainties from the non-homogeneity of the neutron flux and the error on the weight of comparators. Determination limits for 49 elements were presented under the condition of 72 hours irradiation at a neutron flux of 3.7·10¹³ n·cm^-2·s^-1 and 4000 s measurement. The analytical results obtained by this method and the conventional single comparator method were compared and were found to agree well within 5%.