Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator |
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引用本文: | 陈雪,汪志刚,王喜,James B Kuo.Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator[J].中国物理 B,2018(4). |
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作者姓名: | 陈雪 汪志刚 王喜 James B Kuo |
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摘 要: | An improved vertical power double-diffused metal–oxide–semiconductor(DMOS) device with a p-region(P1) and high-κ insulator vertical double-diffusion metal–oxide–semiconductor(HKP-VDMOS) is proposed to achieve a better performance on breakdown voltage(BV)/specific on-resistance(Ron,sp) than conventional VDMOS with a high-κ insulator(CHK-VDMOS).The main mechanism is that with the introduction of the P-region,an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage.Due to the assisted depletion effect of this p-region,the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region.Meanwhile,based on the superposition of the depleted charges,a closed-form model for electric field/breakdown voltage is generally derived,which is in good agreement with the simulation result within 10% of error.An HKP-VDMOS device with a breakdown voltage of 600 V,a reduced specific on-resistance of 11.5 m?·cm~2 and a figure of merit(FOM)(BV~2/Ron,sp)of 31.2 MW·cm~(-2) shows a substantial improvement compared with the CHK-VDMOS device.
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