Analysis of temperature and enhanced diffusion effects in sputtering of CrSi2

Previously reported experimental results on sputtering and enhanced diffusion processes in CrSi₂ during 100 keVXe⁺ bombardment at different temperatures have been quantitatively analyzed.The framework for the analysis is a simple theoretical model in which the Si atoms are considered mobile in a matrix of Cr atoms whose density is assumed constant and diffusivity is considered zero everywhere. Erosion velocity of the matrix (due to the sputtering of Cr atoms), sputtering and enhanced diffusion processes of Si atoms are taken into account in the mathematical model.In our analysis we show that the time evolution of the total number of sputtered atoms in binary solids cannot yield an unambigous conclusion as to the existence of preferential sputtering.Further, it is found that in the case of CrSi₂ the preferential sputtering of Si atoms depends on the suicide temperature.