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Effect of UV anneal on plasma CVD low-k film |
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| Authors: | Yoshimi Shioya Toshiyuki Ohdaira Ryoichi Suzuki Yutaka Seino Kazuhiko Omote |
| Institution: | aNational Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan bRigaku Co. Ltd., 3-9-12 Matsubara-cho, Akishima-shi, Tokyo 196-8666, Japan cNanomaterial Laboratory Co. Ltd., 1-3-7-906, Minamiyamata, Tsuzuki-ku, Yokohama-shi, Kanagawa 224-0029, Japan |
| Abstract: | Plasma-enhanced chemical vapor deposition (PE-CVD) low-dielectric (low-k) film was irradiated with ultra violet (UV) light of wavelength 172 nm to enhance mechanical strength and reduce dielectric constant (k value). The thickness measurement method for the UV annealed low-k film is discussed. The effects of UV irradiation on dielectric constant, shrinkage, stress, density, pore size, mechanical strength, and structure are clarified and the mechanism is discussed. |
| Keywords: | Amorphous metals metallic glasses Dielectric properties relaxation electric modulus Plasma deposition Indentation microindentation FTIR measurements Silicates |
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