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Crystalline orientation of the InN films prepared by atmospheric pressure halide chemical vapor deposition |
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| Authors: | Naoyuki Takahashi Arei Niwa Tadashi Takahashi Takato Nakamura |
| Affiliation: | a Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan;b Group I, Development, Suzuki Motor Corporation, Hamamatsu-Nishi, Hamamatsu, Shizuoka 432-8611, Japan |
| Abstract: | The structural analysis of the hexagonal InN film prepared on a Si(100) substrate by the AP-HCVD technique using InCl3 and NH3 as starting materials were carried out by the X-ray pole figure analysis. The deposited films consist of the hexagonal InN pillar crystals. It was found that the pillar crystals, which have random rotation around the 100 axis, were grown at an angle of 70–90° to the substrate. |
| Keywords: | InN AP-HCVD Crystalline orientation Pillar crystals X-ray pole figure |
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