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Optimization of 780?nm DFB diode lasers for high-power narrow linewidth emission |
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| Authors: | T-P Nguyen M Schiemangk S Spie?berger H Wenzel A Wicht A Peters G Erbert G Tr?nkle |
| Institution: | 1. Ferdinand-Braun-Institut, Leibniz-Institut für H?chstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany 2. School of Engineering Physics, Hanoi University of Science and Technology, Nr. 1 Dai Co Viet, Hanoi, Vietnam 3. Humboldt-Universit?t zu Berlin, Institut für Physik, Newtonstr. 15, 12489, Berlin, Germany |
| Abstract: | We demonstrate the realization of narrow linewidth, high-power ridge waveguide DFB diode lasers emitting near 780?nm. The effects of the coupling coefficient, the laser chip length, and the fabrication process onto the spectral linewidth are discussed. By optimizing both the cavity length and the coupling coefficient, we achieve an intrinsic spectral linewidth as small as 35?kHz at an output power of 270?mW. |
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