| Siδ掺杂AlxGa1-xAs/GaAs异质结二维电子气的SdH振荡研究 |
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| 引用本文： | 韦亚一,沈金熙,郑国珍,郭少令,汤定元,彭正夫,张允强.Siδ掺杂AlxGa1-xAs/GaAs异质结二维电子气的SdH振荡研究[J].物理学报,1994,43(2):282-288. |
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| 作者姓名： | 韦亚一 沈金熙 郑国珍 郭少令 汤定元 彭正夫 张允强 |
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| 作者单位： | (1)南京电子器件研究所; (2)中国科学院上海技术物理研究所 |
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| 摘 要： | 使用分子束外延方法生长了一种新的基于Ｓｉδ掺杂的AlxGa1-xAs/GaAs异质结，测量了０．３－３０Ｋ低温下异质结处二维电子气的横向磁阻、迁移率和Ｈａｌｌ电阻，磁阻的Ｓｈｕｂｎｉ－ｋｏｖ－ｄｅ Ｈａｓｓ（ＳｄＨ）振荡非常明显。对振荡曲线作快速Ｆｏｕｒｉｅｒ变换分析，获得了二维电子气中每一子能带上占据的电子数密度和有效质量（ｍ0*／ｍ0＝０．０７３，ｍ1*关键词：
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| 收稿时间： | 1993-04-26 |
STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION |
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| WEI YA-YI,SHEN JIN-XI,ZHENG GUO-ZHEN,GUO SHAO-LING,TANG DING-YUAN,PENG ZHENG-FU and ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION[J].Acta Physica Sinica,1994,43(2):282-288. |
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| Authors: | WEI YA-YI SHEN JIN-XI ZHENG GUO-ZHEN GUO SHAO-LING TANG DING-YUAN PENG ZHENG-FU and ZHANG YUN-QIANG |
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| Abstract: | A new type of AlxGa1-xAs/GaAs beterojunction based on Si δ-doping has been fabricated by MBE method. We measured the magnetoresistances, mobility and Hall resistance of the 2-D electron gas at the junction in a transvers magnetic field from 0.3 to 30K. Using Fourier-transform analysis, the distribution of electrons and their effective masses for each subband are determined. which
are ｍ0*／ｍ0＝０．０７３，ｍ1*／ｍ0＝０．０６８. With the decreasing of temperature，the electrons in each subband increase continuously. We observed abnormal peaks in magnetoresistance wben magnetic field was scanned from 0 to 7T at 0.3K. |
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